Information card for entry 7001438

Structure parameters

• Formula: C51 H69 B N4 Si2 Sn
• Calculated formula: C51 H69 B N4 Si2 Sn
• SMILES: [Sn]12([N](c3c1c(N(C)C)ccc3)(C)C)([N](c1c2c(N(C)C)ccc1)(C)C)C([Si](C)(C)C)[Si](C)(C)C.[B-](c1ccccc1)(c1ccccc1)(c1ccccc1)c1ccccc1
• Title of publication: Synthesis and characterisation of twelve SnIV diaryls and formation of a SnIII triaryl
• Authors of publication: Hitchcock, Peter B.; Lappert, Michael F.; Pierssens, Luc J.-M.; Protchenko, Andrey V.; Uiterweerd, Patrick G. H.
• Journal of publication: Dalton Transactions
• Year of publication: 2009
• Journal issue: 23
• Pages of publication: 4578 - 4585
• a: 10.935 ± 0.004 Å
• b: 12.961 ± 0.006 Å
• c: 17.538 ± 0.004 Å
• α: 99.51 ± 0.03°
• β: 96.56 ± 0.02°
• γ: 95.89 ± 0.04°
• Cell volume: 2416.6 ± 1.6 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0467
• Residual factor for significantly intense reflections: 0.0409
• Weighted residual factors for significantly intense reflections: 0.1196
• Weighted residual factors for all reflections included in the refinement: 0.1243
• Goodness-of-fit parameter for all reflections included in the refinement: 1.073
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No