Information card for entry 7001453
| Formula |
C20 H52 Cl2 Ge2 N6 Si4 |
| Calculated formula |
C20 H52 Cl2 Ge2 N6 Si4 |
| Title of publication |
Novel derivatives of hypervalent germanium: synthesis, structure, and stability |
| Authors of publication |
Lermontova, El'mira Kh.; Huan, MengMeng; Churakov, Andrei V.; Howard, Judith A. K.; Zabalov, Maxim V.; Karlov, Sergey S.; Zaitseva, Galina S. |
| Journal of publication |
Dalton Transactions |
| Year of publication |
2009 |
| Journal issue |
24 |
| Pages of publication |
4695 - 4702 |
| a |
16.744 ± 0.003 Å |
| b |
14.569 ± 0.002 Å |
| c |
13.503 ± 0.002 Å |
| α |
90° |
| β |
90.501 ± 0.004° |
| γ |
90° |
| Cell volume |
3293.8 ± 0.9 Å3 |
| Cell temperature |
120 ± 2 K |
| Ambient diffraction temperature |
120 ± 2 K |
| Number of distinct elements |
6 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0765 |
| Residual factor for significantly intense reflections |
0.0466 |
| Weighted residual factors for significantly intense reflections |
0.1083 |
| Weighted residual factors for all reflections included in the refinement |
0.1179 |
| Goodness-of-fit parameter for all reflections included in the refinement |
0.962 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7001453.html
