Information card for entry 7002924

Structure parameters

• Formula: C15 H20 Cl2 F5 Ga O Si
• Calculated formula: C15 H20 Cl2 F5 Ga O Si
• SMILES: [Ga](Cl)(Cl)(/C(=C/c1c(c(c(c(c1F)F)F)F)F)[Si](C)(C)C)[O](CC)CC
• Title of publication: The influence of halogen substituents on the course of hydrogallation and hydroalumination reactions
• Authors of publication: Uhl, Werner; Claesener, Michael; Hepp, Alexander; Jasper, Beate; Vinogradov, Andrej; van Wüllen, Leo; Köster, Thomas K.-J.
• Journal of publication: Dalton Transactions
• Year of publication: 2009
• Journal issue: 47
• Pages of publication: 10550 - 10562
• a: 7.374 ± 0.002 Å
• b: 11.85 ± 0.004 Å
• c: 12.056 ± 0.004 Å
• α: 79.972 ± 0.005°
• β: 75.908 ± 0.005°
• γ: 87.795 ± 0.005°
• Cell volume: 1006.2 ± 0.5 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 153 ± 2 K
• Number of distinct elements: 7
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.035
• Residual factor for significantly intense reflections: 0.0283
• Weighted residual factors for significantly intense reflections: 0.0682
• Weighted residual factors for all reflections included in the refinement: 0.0707
• Goodness-of-fit parameter for all reflections included in the refinement: 1.033
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No