Information card for entry 7006499

Structure parameters

• Formula: C58 H90 Ga2 N6 Si2
• Calculated formula: C58 H90 Ga2 N6 Si2
• SMILES: [Ga]12(N([Ga]3(N1[Si](C)(C)C)[N](=CC=[N]3c1c(cccc1C(C)C)C(C)C)c1c(cccc1C(C)C)C(C)C)[Si](C)(C)C)[N](=CC=[N]2c1c(cccc1C(C)C)C(C)C)c1c(cccc1C(C)C)C(C)C
• Title of publication: The reactivity of gallium-(I), -(II) and -(III) heterocycles towards Group 15 substrates: attempts to prepare gallium-terminal pnictinidene complexes.
• Authors of publication: Baker, Robert J.; Jones, Cameron; Mills, David P.; Murphy, Damien M.; Hey-Hawkins, Evamarie; Wolf, Robert
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2006
• Journal issue: 1
• Pages of publication: 64 - 72
• a: 15.592 ± 0.003 Å
• b: 21.742 ± 0.004 Å
• c: 17.818 ± 0.004 Å
• α: 90°
• β: 102.34 ± 0.03°
• γ: 90°
• Cell volume: 5901 ± 2 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0856
• Residual factor for significantly intense reflections: 0.0516
• Weighted residual factors for significantly intense reflections: 0.1022
• Weighted residual factors for all reflections included in the refinement: 0.1128
• Goodness-of-fit parameter for all reflections included in the refinement: 1.049
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No