Information card for entry 7007219

Structure parameters

• Formula: C42 H58 N4 Ni Si4
• Calculated formula: C42 H58 N4 Ni Si4
• SMILES: [Ni]12([N]([Si](C)(C)C)=C(N1/C(=C\[Si](C)(C)C)c1ccccc1)c1ccccc1)[N]([Si](C)(C)C)=C(N2/C(=C\[Si](C)(C)C)c1ccccc1)c1ccccc1
• Title of publication: Reactions of M[CH(SiMe3)2] (M = Na or K) with PhCN, and related chemistry.
• Authors of publication: Hitchcock, Peter B.; Lappert, Michael F.; Sablong, Rafaël
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2006
• Journal issue: 34
• Pages of publication: 4146 - 4154
• a: 11.439 ± 0.006 Å
• b: 12.954 ± 0.006 Å
• c: 30.37 ± 0.03 Å
• α: 90°
• β: 97.85 ± 0.06°
• γ: 90°
• Cell volume: 4458 ± 5 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1486
• Residual factor for significantly intense reflections: 0.0804
• Weighted residual factors for significantly intense reflections: 0.1684
• Weighted residual factors for all reflections included in the refinement: 0.2267
• Goodness-of-fit parameter for all reflections included in the refinement: 1.044
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No