Information card for entry 7012526
| Formula |
C29 H41 F Ge N2 Se |
| Calculated formula |
C29 H41 F Ge N2 Se |
| SMILES |
[Ge]1(=[Se])(F)N(C(=CC(=[N]1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C |
| Title of publication |
Syntheses, structures and properties of [{HC(CMeNAr)2}Ge(E)X] (Ar = 2,6-iPr2C6H3; E = S, Se; X = F, Cl) |
| Authors of publication |
Ding, Yuqiang; Ma, Qingjun; Roesky, Herbert W.; Usón, Isabel; Noltemeyer, Mathias; Schmidt, Hans-Georg |
| Journal of publication |
Dalton Transactions |
| Year of publication |
2003 |
| Journal issue |
6 |
| Pages of publication |
1094 |
| a |
21.096 ± 0.004 Å |
| b |
13.3804 ± 0.0015 Å |
| c |
21.605 ± 0.004 Å |
| α |
90° |
| β |
101.514 ± 0.013° |
| γ |
90° |
| Cell volume |
5975.8 ± 1.7 Å3 |
| Cell temperature |
203 ± 2 K |
| Ambient diffraction temperature |
203 ± 2 K |
| Number of distinct elements |
6 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.0565 |
| Residual factor for significantly intense reflections |
0.044 |
| Weighted residual factors for significantly intense reflections |
0.1075 |
| Weighted residual factors for all reflections included in the refinement |
0.1182 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.059 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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