Information card for entry 7012568

Structure parameters

• Formula: C20 H54 Ga2 I2 Si6
• Calculated formula: C20 H54 Ga2 I2 Si6
• SMILES: I[Ga](C([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)[Ga](I)C([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Ga2I2[C(SiMe3)3]2 ‒ an organogallium(ii) halide containing a Ga‒Ga single bond
• Authors of publication: Uhl, Werner; El-Hamdan, Abdelhakim; Prött, Malte; Spuhler, Philipp; Frenking, Gernot
• Journal of publication: Dalton Transactions
• Year of publication: 2003
• Journal issue: 7
• Pages of publication: 1360
• a: 9.308 ± 0.001 Å
• b: 15.405 ± 0.002 Å
• c: 25.564 ± 0.003 Å
• α: 90°
• β: 96.95 ± 0.01°
• γ: 90°
• Cell volume: 3638.7 ± 0.8 ų
• Cell temperature: 193 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.069
• Residual factor for significantly intense reflections: 0.0456
• Weighted residual factors for significantly intense reflections: 0.1049
• Weighted residual factors for all reflections included in the refinement: 0.1163
• Goodness-of-fit parameter for all reflections included in the refinement: 1.013
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No