Information card for entry 7013432

Structure parameters

• Formula: C24 H66 Ga3 N9 Si6
• Calculated formula: C24 H66 Ga3 N9 Si6
• SMILES: [Ga]1([N]([Ga]([N]([Ga]([N]1=N#N)(C[Si](C)(C)C)C[Si](C)(C)C)=N#N)(C[Si](C)(C)C)C[Si](C)(C)C)=N#N)(C[Si](C)(C)C)C[Si](C)(C)C
• Title of publication: Oligomerization of dialkylazidogallium compounds: a structural and solution-phase studyElectronic supplementary information (ESI) available: Fig. S1: Mass spectrum of 1 with M+ peak at 225 and higher oligomers present in the vapor phase. See http://www.rsc.org/suppdata/dt/b3/b307813b/
• Authors of publication: Dingman, Sean D.; Rath, Nigam P.; Buhro, William E.
• Journal of publication: Dalton Transactions
• Year of publication: 2003
• Journal issue: 19
• Pages of publication: 3675
• a: 12.3854 ± 0.0001 Å
• b: 13.5088 ± 0.0002 Å
• c: 15.2823 ± 0.0002 Å
• α: 86.595 ± 0.001°
• β: 67.665 ± 0.001°
• γ: 87.91°
• Cell volume: 2360.64 ± 0.05 ų
• Cell temperature: 218 ± 2 K
• Ambient diffraction temperature: 218 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1369
• Residual factor for significantly intense reflections: 0.0643
• Weighted residual factors for significantly intense reflections: 0.1292
• Weighted residual factors for all reflections included in the refinement: 0.1456
• Goodness-of-fit parameter for all reflections included in the refinement: 1.028
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No