Information card for entry 7013952

Structure parameters

• Formula: C32 H42 Ni P2 S2 Si2
• Calculated formula: C32 H42 Ni P2 S2 Si2
• SMILES: [Ni]1(S[Si](C)(C)C)(S[Si](C)(C)C)[P](CC[P]1(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1
• Title of publication: Synthesis and structural characterization of silanethiolato complexes having tert-butyldimethylsilyl and trimethylsilyl groups.
• Authors of publication: Komuro, Takashi; Matsuo, Tsukasa; Kawaguchi, Hiroyuki; Tatsumi, Kazuyuki
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2004
• Journal issue: 10
• Pages of publication: 1618 - 1625
• a: 10.309 ± 0.006 Å
• b: 27.5 ± 0.02 Å
• c: 13.133 ± 0.008 Å
• α: 90°
• β: 110.341 ± 0.007°
• γ: 90°
• Cell volume: 3491 ± 4 ų
• Cell temperature: 153.1 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for significantly intense reflections: 0.064
• Weighted residual factors for all reflections included in the refinement: 0.105
• Goodness-of-fit parameter for all reflections included in the refinement: 1.031
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No