Information card for entry 7019852

Structure parameters

• Formula: C40 H52 O4 Sn2
• Calculated formula: C40 H52 O4 Sn2
• SMILES: [O]1(c2ccccc2C(C)(C)C)[Sn](Oc2ccccc2C(C)(C)C)[O](c2ccccc2C(C)(C)C)[Sn]1Oc1ccccc1C(C)(C)C
• Title of publication: Tin(ii) amide/alkoxide coordination compounds for production of Sn-based nanowires for lithium ion battery anode materials.
• Authors of publication: Boyle, Timothy J.; Doan, Thu Q.; Steele, Leigh Anna M.; Apblett, Christopher; Hoppe, Sarah M.; Hawthorne, Krista; Kalinich, Robin M.; Sigmund, Wolfgang M.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2012
• Journal volume: 41
• Journal issue: 31
• Pages of publication: 9349 - 9364
• a: 8.36 ± 0.004 Å
• b: 11.187 ± 0.005 Å
• c: 12.069 ± 0.006 Å
• α: 63.389 ± 0.004°
• β: 71.234 ± 0.005°
• γ: 84.577 ± 0.005°
• Cell volume: 953.9 ± 0.8 ų
• Cell temperature: 273 ± 2 K
• Ambient diffraction temperature: 273 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.021
• Residual factor for significantly intense reflections: 0.0197
• Weighted residual factors for significantly intense reflections: 0.0472
• Weighted residual factors for all reflections included in the refinement: 0.048
• Goodness-of-fit parameter for all reflections included in the refinement: 1.051
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No