Information card for entry 7019854

Structure parameters

• Formula: C50 H75 N O4 Sn2
• Calculated formula: C50 H75 N O4 Sn2
• SMILES: [Sn]1([NH](C)C)(Oc2c(cccc2C(C)C)C(C)C)[O]([Sn]([O]1c1c(cccc1C(C)C)C(C)C)Oc1c(cccc1C(C)C)C(C)C)c1c(cccc1C(C)C)C(C)C
• Title of publication: Tin(ii) amide/alkoxide coordination compounds for production of Sn-based nanowires for lithium ion battery anode materials.
• Authors of publication: Boyle, Timothy J.; Doan, Thu Q.; Steele, Leigh Anna M.; Apblett, Christopher; Hoppe, Sarah M.; Hawthorne, Krista; Kalinich, Robin M.; Sigmund, Wolfgang M.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2012
• Journal volume: 41
• Journal issue: 31
• Pages of publication: 9349 - 9364
• a: 19.628 ± 0.003 Å
• b: 13.8183 ± 0.0019 Å
• c: 19.431 ± 0.003 Å
• α: 90°
• β: 111.156 ± 0.006°
• γ: 90°
• Cell volume: 4915 ± 1.3 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0712
• Residual factor for significantly intense reflections: 0.036
• Weighted residual factors for significantly intense reflections: 0.0739
• Weighted residual factors for all reflections included in the refinement: 0.0931
• Goodness-of-fit parameter for all reflections included in the refinement: 1.054
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No