Information card for entry 7020531

Structure parameters

• Formula: C42 H54 Al2 N6 Sn2 Yb
• Calculated formula: C42 H54 Al2 N6 Sn2 Yb
• SMILES: c12c(ccc[n]1[Yb]134([n]5c([Sn]2(c2c(ccc[n]12)C)[Al](C)(C)C)c(ccc5)C)[n]1c(c(ccc1)C)[Sn](c1c(ccc[n]31)C)(c1c(ccc[n]41)C)[Al](C)(C)C)C
• Title of publication: Syntheses and structures of lanthanoid(ii) complexes featuring Sn-M (M = Al, Ga, In) bonds.
• Authors of publication: Zeckert, Kornelia
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2012
• Journal volume: 41
• Journal issue: 46
• Pages of publication: 14101 - 14106
• a: 14.559 ± 0.0003 Å
• b: 14.559 ± 0.0003 Å
• c: 17.5926 ± 0.0006 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 3229.41 ± 0.14 ų
• Cell temperature: 130 ± 2 K
• Ambient diffraction temperature: 130 ± 2 K
• Number of distinct elements: 6
• Space group number: 148
• Hermann-Mauguin space group symbol: R -3 :H
• Hall space group symbol: -R 3
• Residual factor for all reflections: 0.0192
• Residual factor for significantly intense reflections: 0.0165
• Weighted residual factors for significantly intense reflections: 0.0451
• Weighted residual factors for all reflections included in the refinement: 0.0456
• Goodness-of-fit parameter for all reflections included in the refinement: 1.093
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No