Information card for entry 7020733

Structure parameters

• Formula: C78 H74 P4 Ru Si2
• Calculated formula: C78 H74 P4 Ru Si2
• SMILES: C(#Cc1ccc(cc1)C#C[Si](C)(C)C)[Ru]12(C#Cc3ccc(cc3)C#C[Si](C)(C)C)([P](CC[P]1(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1)[P](CC[P]2(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1
• Title of publication: Simplifying the conductance profiles of molecular junctions: the use of the trimethylsilylethynyl moiety as a molecule-gold contact.
• Authors of publication: Marqués-González, Santiago; Yufit, Dmitry S.; Howard, Judith A. K.; Martín, Santiago; Osorio, Henrry M.; García-Suárez, Víctor M; Nichols, Richard J.; Higgins, Simon J.; Cea, Pilar; Low, Paul J.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2013
• Journal volume: 42
• Journal issue: 2
• Pages of publication: 338 - 341
• a: 9.4265 ± 0.0004 Å
• b: 13.513 ± 0.0005 Å
• c: 14.2919 ± 0.0006 Å
• α: 76.253 ± 0.002°
• β: 74.292 ± 0.003°
• γ: 71.596 ± 0.002°
• Cell volume: 1639.65 ± 0.12 ų
• Cell temperature: 120 K
• Ambient diffraction temperature: 120 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0711
• Residual factor for significantly intense reflections: 0.0453
• Weighted residual factors for significantly intense reflections: 0.1029
• Weighted residual factors for all reflections included in the refinement: 0.1119
• Goodness-of-fit parameter for all reflections included in the refinement: 0.99
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Diffraction radiation X-ray symbol: K-L~3~
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No