Information card for entry 7027810

Structure parameters

• Formula: C80 H176 Ag10 La2 N16 O16 S32 W8
• Calculated formula: C80 Ag10 La2 N16 O16 S32 W8
• Title of publication: The unconventional semiconductors represent two novel structure types of polythiometalates: syntheses, structures and electrical properties of {[W3Ag3S12]·[La(DMAC)5(H2O)3·(DMAC)4]}n and {[W8Ag10S32]·[M(DEF)8]2}n (M = La, Nd) †
• Authors of publication: Chen, Ling; Wu, Xin-tao; Gao, Xian-cheng; Zhang, Wen-jian; Lin, Ping
• Journal of publication: Journal of the Chemical Society, Dalton Transactions
• Year of publication: 1999
• Journal issue: 24
• Pages of publication: 4303
• a: 21.6534 ± 0.0003 Å
• b: 18.1125 ± 0.0001 Å
• c: 22.1818 ± 0.0003 Å
• α: 90°
• β: 108.531 ± 0.001°
• γ: 90°
• Cell volume: 8248.58 ± 0.17 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 8
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.1648
• Residual factor for significantly intense reflections: 0.084
• Weighted residual factors for all reflections: 0.2034
• Weighted residual factors for significantly intense reflections: 0.1668
• Goodness-of-fit parameter for all reflections: 1.045
• Goodness-of-fit parameter for significantly intense reflections: 1.215
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No