Information card for entry 7028602

Structure parameters

• Formula: C33 H72 In N9
• Calculated formula: C33 H72 In N9
• SMILES: C1(=[N]([In]23(N1C(C)C)([N](=C(N3C(C)C)N(CC)CC)C(C)C)[N](=C([N]2C(C)C)N(CC)CC)C(C)C)C(C)C)N(CC)CC
• Title of publication: Indium-tris-guanidinates: a promising class of precursors for water assisted atomic layer deposition of In2O3 thin films.
• Authors of publication: Gebhard, M.; Hellwig, M.; Parala, H.; Xu, K.; Winter, M.; Devi, A.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2014
• Journal volume: 43
• Journal issue: 3
• Pages of publication: 937 - 940
• a: 16.4523 ± 0.0003 Å
• b: 12.8122 ± 0.0014 Å
• c: 19.7849 ± 0.0015 Å
• α: 90°
• β: 98.503 ± 0.006°
• γ: 90°
• Cell volume: 4124.6 ± 0.6 ų
• Cell temperature: 111 ± 2 K
• Ambient diffraction temperature: 111 ± 2 K
• Number of distinct elements: 4
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0384
• Residual factor for significantly intense reflections: 0.0299
• Weighted residual factors for significantly intense reflections: 0.067
• Weighted residual factors for all reflections included in the refinement: 0.069
• Goodness-of-fit parameter for all reflections included in the refinement: 1.011
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No