Information card for entry 7030358
| Formula |
C81.4 H196.6 Cl1.4 Cu12 N12 O59.2 Y4 |
| Calculated formula |
C81.4 H196.6 Cl1.4 Cu12 N12 O59.2 Y4 |
| Title of publication |
Semiconducting composite oxide Y2CuO4-5CuO thin films for investigation of photoelectrochemical properties. |
| Authors of publication |
Ahmed, Sohail; Mansoor, Muhammad Adil; Mazhar, Muhammad; Söhnel, Tilo; Khaledi, Hamid; Basirun, Wan Jefrey; Arifin, Zainudin; Abubakar, Shahzad; Muhammad, Bakhtiar |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2014 |
| Journal volume |
43 |
| Journal issue |
22 |
| Pages of publication |
8523 - 8529 |
| a |
22.3199 ± 0.0009 Å |
| b |
13.7789 ± 0.0006 Å |
| c |
23.233 ± 0.001 Å |
| α |
90° |
| β |
105.863 ± 0.003° |
| γ |
90° |
| Cell volume |
6873.1 ± 0.5 Å3 |
| Cell temperature |
80 ± 2 K |
| Ambient diffraction temperature |
80 ± 2 K |
| Number of distinct elements |
7 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0761 |
| Residual factor for significantly intense reflections |
0.0393 |
| Weighted residual factors for significantly intense reflections |
0.0787 |
| Weighted residual factors for all reflections included in the refinement |
0.0905 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.038 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
Yes |
| Has Fobs |
No |
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