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Information card for entry 7030796
Preview
| Coordinates | 7030796.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C22 H46 N4 Ni Si2 |
|---|---|
| Calculated formula | C22 H46 N4 Ni Si2 |
| SMILES | [Ni]([SiH](C)C)([SiH](C)C)(=C1N(C=CN1C(C)C)C(C)C)=C1N(C=CN1C(C)C)C(C)C |
| Title of publication | Si-H bond activation at {(NHC)2Ni(0)} leading to hydrido silyl and bis(silyl) complexes: a versatile tool for catalytic Si-H/D exchange, acceptorless dehydrogenative coupling of hydrosilanes, and hydrogenation of disilanes to hydrosilanes. |
| Authors of publication | Schmidt, David; Zell, Thomas; Schaub, Thomas; Radius, Udo |
| Journal of publication | Dalton transactions (Cambridge, England : 2003) |
| Year of publication | 2014 |
| Journal volume | 43 |
| Journal issue | 28 |
| Pages of publication | 10816 - 10827 |
| a | 32.548 ± 0.007 Å |
| b | 9.6502 ± 0.0019 Å |
| c | 18.368 ± 0.004 Å |
| α | 90° |
| β | 99.54 ± 0.03° |
| γ | 90° |
| Cell volume | 5690 ± 2 Å3 |
| Cell temperature | 203 ± 2 K |
| Ambient diffraction temperature | 203 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.0563 |
| Residual factor for significantly intense reflections | 0.0371 |
| Weighted residual factors for significantly intense reflections | 0.0872 |
| Weighted residual factors for all reflections included in the refinement | 0.0952 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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