Information card for entry 7031790

Structure parameters

• Formula: C16 H56 Ce K N4 Si8
• Calculated formula: C16 H56 Ce K N4 Si8
• SMILES: C[SiH](C)N([Ce](N([SiH](C)C)[SiH](C)C)(N([SiH](C)C)[SiH](C)C)N([SiH](C)C)[SiH](C)C)[SiH](C)C.[K+]
• Title of publication: Variation of electronic transitions and reduction potentials of cerium(iv) complexes.
• Authors of publication: Williams, Ursula J.; Schneider, David; Dorfner, Walter L.; Maichle-Mössmer, Cäcilia; Carroll, Patrick J.; Anwander, Reiner; Schelter, Eric J.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2014
• Journal volume: 43
• Journal issue: 43
• Pages of publication: 16197 - 16206
• a: 19.6084 ± 0.0007 Å
• b: 11.0986 ± 0.0004 Å
• c: 18.1627 ± 0.0006 Å
• α: 90°
• β: 106.227 ± 0.001°
• γ: 90°
• Cell volume: 3795.2 ± 0.2 ų
• Cell temperature: 143 ± 1 K
• Ambient diffraction temperature: 143 ± 1 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0175
• Residual factor for significantly intense reflections: 0.0158
• Weighted residual factors for significantly intense reflections: 0.0404
• Weighted residual factors for all reflections included in the refinement: 0.0419
• Goodness-of-fit parameter for all reflections included in the refinement: 1.125
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No