Information card for entry 7039591

Structure parameters

• Common name: jpd20140516
• Chemical name: tris[(tri-tert-butoxy)siloxy]gallium, THF adduct
• Formula: C40 H89 Ga O13 Si3
• Calculated formula: C40 H89 Ga O13 Si3
• SMILES: C(C)(C)(C)O[Si](O[Ga](O[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)(O[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)[O]1CCCC1)(OC(C)(C)C)OC(C)(C)C
• Title of publication: Ga[OSi(O(t)Bu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry.
• Authors of publication: Dombrowski, James P.; Johnson, Gregory R.; Bell, Alexis T.; Tilley, T. Don
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2016
• Journal volume: 45
• Journal issue: 27
• Pages of publication: 11025 - 11034
• a: 18.0537 ± 0.0008 Å
• b: 25.2459 ± 0.0012 Å
• c: 26.1016 ± 0.0012 Å
• α: 63.017 ± 0.002°
• β: 89.975 ± 0.002°
• γ: 89.758 ± 0.002°
• Cell volume: 10601.5 ± 0.9 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1577
• Residual factor for significantly intense reflections: 0.1484
• Weighted residual factors for significantly intense reflections: 0.3505
• Weighted residual factors for all reflections included in the refinement: 0.3544
• Goodness-of-fit parameter for all reflections included in the refinement: 1.2
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No