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Information card for entry 7047866
Preview
| Coordinates | 7047866.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | Ba2 Ga2 Na2 Se6 |
|---|---|
| Calculated formula | Ba2 Ga2 Na2 Se6 |
| SMILES | [Ba+2].[Na+].[Ga]1([Se-])([Se-])[Se][Ga]([Se]1)([Se-])[Se-].[Na+].[Ba+2] |
| Title of publication | NaBaM<sup>III</sup>Q<sub>3</sub> (M<sup>III</sup> = Al, Ga; Q = S, Se): first quaternary chalcogenides with isolated edge-sharing (MQ<sub>6</sub>)<sup>6-</sup> dimers. |
| Authors of publication | Abudurusuli, Ailijiang; Wu, Kui; Rouzhahong, Yilimiranmu; Yang, Zhihua; Pan, Shilie |
| Journal of publication | Dalton transactions (Cambridge, England : 2003) |
| Year of publication | 2018 |
| Journal volume | 47 |
| Journal issue | 45 |
| Pages of publication | 16044 - 16047 |
| a | 20.461 ± 0.013 Å |
| b | 9.177 ± 0.006 Å |
| c | 7.177 ± 0.004 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 1347.6 ± 1.4 Å3 |
| Cell temperature | 296 ± 2 K |
| Ambient diffraction temperature | 296 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 62 |
| Hermann-Mauguin space group symbol | P n m a |
| Hall space group symbol | -P 2ac 2n |
| Residual factor for all reflections | 0.0408 |
| Residual factor for significantly intense reflections | 0.0271 |
| Weighted residual factors for significantly intense reflections | 0.0447 |
| Weighted residual factors for all reflections included in the refinement | 0.0487 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.026 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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