Information card for entry 7047959
| Formula |
C54 H64 Ge N4 O4 |
| Calculated formula |
C54 H64 Ge N4 O4 |
| Title of publication |
Halogen-free GeO<sub>2</sub> conversion: electrochemical reduction vs. complexation in (DTBC)<sub>2</sub>Ge[Py(CN)<sub>n</sub>] (n = 0…2) complexes. |
| Authors of publication |
Nikolaevskaya, Elena N.; Saverina, Evgeniya A.; Starikova, Alyona A.; Farhati, Amel; Kiskin, Mikhail A.; Syroeshkin, Mikhail A.; Egorov, Mikhail P.; Jouikov, Viatcheslav V. |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2018 |
| Journal volume |
47 |
| Journal issue |
47 |
| Pages of publication |
17127 - 17133 |
| a |
15.0823 ± 0.0015 Å |
| b |
22.183 ± 0.002 Å |
| c |
7.363 ± 0.0008 Å |
| α |
90° |
| β |
94.243 ± 0.002° |
| γ |
90° |
| Cell volume |
2456.7 ± 0.4 Å3 |
| Cell temperature |
150 ± 2 K |
| Ambient diffraction temperature |
150 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.101 |
| Residual factor for significantly intense reflections |
0.0513 |
| Weighted residual factors for significantly intense reflections |
0.1246 |
| Weighted residual factors for all reflections included in the refinement |
0.1605 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.012 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
Yes |
| Has Fobs |
No |
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https://www.crystallography.net/7047959.html
