Information card for entry 7101937

Structure parameters

• Formula: C49 H58 Si3
• Calculated formula: C49 H58 Si3
• SMILES: [Si](c1ccccc1)(C[C@H]1[C@@H](C(=CC(=C1[Si](C)(C)C)c1ccccc1)c1ccccc1)/C(=C/[Si](C)(C)C)c1ccccc1)(c1ccccc1)C(C)(C)C.[Si](c1ccccc1)(C[C@@H]1[C@H](C(=CC(=C1[Si](C)(C)C)c1ccccc1)c1ccccc1)/C(=C/[Si](C)(C)C)c1ccccc1)(c1ccccc1)C(C)(C)C
• Title of publication: Lewis acid-catalyzed formation of indene derivatives via tandem reactions of arylacetylenes with the cations generated from 2-silylmethyl cyclopropyl carbinols.
• Authors of publication: Yadav, Veejendra K; Kumar, Naganaboina Vijaya; Parvez, Masood
• Journal of publication: Chemical communications (Cambridge, England)
• Year of publication: 2007
• Journal issue: 22
• Pages of publication: 2281 - 2283
• a: 10.3025 ± 0.0007 Å
• b: 17.9876 ± 0.0013 Å
• c: 23.1998 ± 0.0017 Å
• α: 90°
• β: 92.483 ± 0.001°
• γ: 90°
• Cell volume: 4295.3 ± 0.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 3
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.1048
• Residual factor for significantly intense reflections: 0.0691
• Weighted residual factors for significantly intense reflections: 0.1455
• Weighted residual factors for all reflections included in the refinement: 0.1612
• Goodness-of-fit parameter for all reflections included in the refinement: 1.014
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No