Information card for entry 7104458

Structure parameters

• Formula: C42 H50 Si2
• Calculated formula: C42 H50 Si2
• Title of publication: High performance, acene-based organic thin film transistors.
• Authors of publication: Llorente, Gonzalo Rincon; Dufourg-Madec, Marie-Beatrice; Crouch, David J; Pritchard, Robin G; Ogier, Simon; Yeates, Stephen G
• Journal of publication: Chemical communications (Cambridge, England)
• Year of publication: 2009
• Journal volume: 34
• Journal issue: 21
• Pages of publication: 3059 - 3061
• a: 7.3024 ± 0.0002 Å
• b: 10.9762 ± 0.0003 Å
• c: 12.109 ± 0.0004 Å
• α: 74.402 ± 0.003°
• β: 89.953 ± 0.002°
• γ: 73.746 ± 0.002°
• Cell volume: 894.55 ± 0.05 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 3
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1162
• Residual factor for significantly intense reflections: 0.0771
• Weighted residual factors for significantly intense reflections: 0.1697
• Weighted residual factors for all reflections included in the refinement: 0.1991
• Goodness-of-fit parameter for all reflections included in the refinement: 0.967
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No