Information card for entry 7110842

Structure parameters

• Formula: C52 H92 N4 O Si4 Sn2
• Calculated formula: C52 H92 N4 O Si4 Sn2
• SMILES: [Sn]12([Sn]3C(=Cc4c(cccc4)C=C3N([Si](C)(C)C)C(C)(C)C)N([Si](C)(C)C)C(C)(C)C)[N](=C([Si](C)(C)C)C2c2ccccc2C=C1N([Si](C)(C)C)C(C)(C)C)C(C)(C)C.C1CCCO1
• Title of publication: Synthesis and structural characterization of a novel asymmetric distannene [{1-[N(But)C(SiMe3)C(H)]-2-[N(But)(SiMe3)CC(H)]C6H4}Sn\ρightarrow Sn{1,2-[N(But)(SiMe3)CC(H)]2C6H4}]
• Authors of publication: Leung, Wing-Por; Cheng, Hui; Huang, Rong-Bin; Yang, Qing-Chuan; Mak, Thomas C. W.
• Journal of publication: Chemical Communications
• Year of publication: 2000
• Journal issue: 6
• Pages of publication: 451
• a: 12.108 ± 0.001 Å
• b: 36.869 ± 0.003 Å
• c: 14.32 ± 0.001 Å
• α: 90°
• β: 105.004 ± 0.002°
• γ: 90°
• Cell volume: 6174.7 ± 0.8 ų
• Cell temperature: 294 ± 2 K
• Ambient diffraction temperature: 294 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.106
• Residual factor for significantly intense reflections: 0.054
• Weighted residual factors for significantly intense reflections: 0.1269
• Weighted residual factors for all reflections included in the refinement: 0.1435
• Goodness-of-fit parameter for all reflections included in the refinement: 0.974
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No