Information card for entry 7114292

Structure parameters

• Formula: C40 H52 N4 O4 Si
• Calculated formula: C32 N2 O2 Si0.25
• Title of publication: Structure and exchange in silicon-linked tetraradicalsElectronic supplementary information (ESI) available: EPR spectra, X-ray crystallographic data and packing views, synthetic and characterization details for 1a and 2, χT plot for 2, and computational summaries for model systems. See http://www.rsc.org/suppdata/cc/b1/b107430j/
• Authors of publication: Liao, Yi; Baskett, Martha; Lahti, Paul M.; Palacio, Fernando
• Journal of publication: Chemical Communications
• Year of publication: 2002
• Journal issue: 3
• Pages of publication: 252
• a: 16.661 ± 0.002 Å
• b: 16.661 ± 0.002 Å
• c: 7.0586 ± 0.0009 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1959.4 ± 0.4 ų
• Cell temperature: 298 K
• Number of distinct elements: 5
• Space group number: 86
• Hermann-Mauguin space group symbol: P 42/n :2
• Hall space group symbol: -P 4bc
• Residual factor for all reflections: 0.315
• Residual factor for significantly intense reflections: 0.246
• Weighted residual factors for all reflections: 0.264
• Weighted residual factors for significantly intense reflections: 0.218
• Weighted residual factors for all reflections included in the refinement: 0.218
• Goodness-of-fit parameter for all reflections: 4.832
• Goodness-of-fit parameter for significantly intense reflections: 5.89
• Goodness-of-fit parameter for all reflections included in the refinement: 5.89
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No