Information card for entry 7114718

Structure parameters

• Formula: C65 H51 Ag Cl3 In O4 P2 S4
• Calculated formula: C65 H50 Ag Cl3 In O4 P2 S4
• Title of publication: Single-source precursors to ternary silver indium sulfide materials
• Authors of publication: Deivaraj, Theivanayagam C.; Park, Jin-Ho; Afzaal, Mohammmad; O′Brien, Paul; Vittal, Jagadese J.
• Journal of publication: Chemical Communications
• Year of publication: 2001
• Journal issue: 22
• Pages of publication: 2304
• a: 12.7284 ± 0.0005 Å
• b: 14.3145 ± 0.0006 Å
• c: 18.7071 ± 0.0007 Å
• α: 90.716 ± 0.001°
• β: 99.624 ± 0.001°
• γ: 110.728 ± 0.001°
• Cell volume: 3133.4 ± 0.2 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 8
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0844
• Residual factor for significantly intense reflections: 0.0481
• Weighted residual factors for significantly intense reflections: 0.0859
• Weighted residual factors for all reflections included in the refinement: 0.0962
• Goodness-of-fit parameter for all reflections included in the refinement: 0.897
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No