Information card for entry 7114910

Structure parameters

• Formula: C43 H69 In Si2
• Calculated formula: C43 H69 In Si2
• SMILES: [In]([Si](C1(C(=C(C(=C1C)C)C)C)C)(C1(C(=C(C(=C1C)C)C)C)C)C)([Si](C)(C1(C(=C(C(=C1C)C)C)C)C)C1(C(=C(C(=C1C)C)C)C)C)C
• Title of publication: Easy formation of indium‒silicon bonds: reaction of decamethylsilicocene with trimethylindium
• Authors of publication: Kühler, Thorsten; Jutzi, Peter; Stammler, Anja; Stammler, Hans-Georg
• Journal of publication: Chemical Communications
• Year of publication: 2001
• Journal issue: 6
• Pages of publication: 539
• a: 10.808 ± 0.007 Å
• b: 12.425 ± 0.009 Å
• c: 16.592 ± 0.011 Å
• α: 71.99 ± 0.05°
• β: 77.4 ± 0.06°
• γ: 81.18 ± 0.06°
• Cell volume: 2059 ± 3 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0903
• Residual factor for significantly intense reflections: 0.0614
• Weighted residual factors for significantly intense reflections: 0.1462
• Weighted residual factors for all reflections included in the refinement: 0.1628
• Goodness-of-fit parameter for all reflections included in the refinement: 1.017
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No