Information card for entry 7115749

Structure parameters

• Formula: C35 H56 Al Bi N2
• Calculated formula: C35 H56 Al Bi N2
• SMILES: [Bi]([Al]1(N(C(=CC(=[N]1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C)CC)(CC)CC
• Title of publication: Sequential Bi-C bond activation reactions of BiEt3via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}
• Authors of publication: C. Ganesamoorthy; D. Blaser; C. Wolper; S. Schulz
• Journal of publication: Chem.Commun.
• Year of publication: 2014
• Journal volume: 50
• Pages of publication: 12382
• a: 11.594 ± 0.0015 Å
• b: 12.2244 ± 0.0016 Å
• c: 12.6546 ± 0.0016 Å
• α: 72.804 ± 0.006°
• β: 88.915 ± 0.006°
• γ: 89.682 ± 0.006°
• Cell volume: 1713.1 ± 0.4 ų
• Cell temperature: 100 ± 1 K
• Ambient diffraction temperature: 100 ± 1 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0194
• Residual factor for significantly intense reflections: 0.0175
• Weighted residual factors for significantly intense reflections: 0.043
• Weighted residual factors for all reflections included in the refinement: 0.0437
• Goodness-of-fit parameter for all reflections included in the refinement: 1.042
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No