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Information card for entry 7117830
Preview
| Coordinates | 7117830.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C54 H72 Cl3 I6 N12 |
|---|---|
| Calculated formula | C54 H72 Cl3 I6 N12 |
| SMILES | c1(c(c(c(C)c(c1C)Cn1c(I)[n+](cc1)CC)Cn1cc[n+](c1I)CC)C)C[n+]1ccn(c1I)CC.[Cl-].[Cl-].c1(c(c(c(C)c(c1C)Cn1c(I)[n+](cc1)CC)Cn1cc[n+](c1I)CC)C)C[n+]1ccn(c1I)CC.[Cl-] |
| Title of publication | Halogen bonding assisted selective removal of bromide |
| Authors of publication | Sourav Chakraborty; Ranjan Dutta; Pradyut Ghosh |
| Journal of publication | Chem.Commun. |
| Year of publication | 2015 |
| Journal volume | 51 |
| Pages of publication | 14793 |
| a | 29.993 ± 0.003 Å |
| b | 12.6135 ± 0.0012 Å |
| c | 21.963 ± 0.002 Å |
| α | 90° |
| β | 109.059 ± 0.002° |
| γ | 90° |
| Cell volume | 7853.5 ± 1.3 Å3 |
| Cell temperature | 150 ± 2 K |
| Ambient diffraction temperature | 150 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.0569 |
| Residual factor for significantly intense reflections | 0.0484 |
| Weighted residual factors for significantly intense reflections | 0.1509 |
| Weighted residual factors for all reflections included in the refinement | 0.1623 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.592 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/7117830.html
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Users of the data should acknowledge the original authors of the
structural data.