Information card for entry 7120541

Structure parameters

• Formula: C27 H41 F6 N3 Si3
• Calculated formula: C27 H41 F6 N3 Si3
• SMILES: [Si](F)(N([Si](C)(C)C)[Si](C)(C)C)(N(/C(=N/C(C)(C)C)c1ccccc1)C(C)(C)C)c1c(F)c(F)c(F)c(F)c1F
• Title of publication: C(sp3)–F, C(sp2)–F and C(sp3)–H bond activation at silicon(II) center
• Authors of publication: Swamy, V.S.V.S.N.; Parvin, Nasrina; Vipin Raj, K.; Vanka, Kumar; Sen, Sakya Singha
• Journal of publication: Chem. Commun.
• Year of publication: 2017
• a: 14.962 ± 0.003 Å
• b: 12.796 ± 0.003 Å
• c: 17.935 ± 0.004 Å
• α: 90°
• β: 113.789 ± 0.005°
• γ: 90°
• Cell volume: 3142 ± 1.2 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1127
• Residual factor for significantly intense reflections: 0.0499
• Weighted residual factors for significantly intense reflections: 0.0918
• Weighted residual factors for all reflections included in the refinement: 0.1157
• Goodness-of-fit parameter for all reflections included in the refinement: 1.02
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No