Information card for entry 7128245
| Formula |
C21 H41 B F3 Ge N3 O Si2 |
| Calculated formula |
C21 H41 B F3 Ge N3 O Si2 |
| SMILES |
[Ge]1(O[B](F)(F)F)([N](=C(N1C(C)(C)C)c1ccccc1)C(C)(C)C)N([Si](C)(C)C)[Si](C)(C)C |
| Title of publication |
The diverse reactivity of NOBF<sub>4</sub> towards silylene, disilene, germylene and stannylene. |
| Authors of publication |
Parvin, Nasrina; Sen, Nilanjana; Muhasina, Puthan Veetil; Tothadi, Srinu; Parameswaran, Pattiyil; Khan, Shabana |
| Journal of publication |
Chemical communications (Cambridge, England) |
| Year of publication |
2021 |
| Journal volume |
57 |
| Journal issue |
41 |
| Pages of publication |
5008 - 5011 |
| a |
8.74 ± 0.02 Å |
| b |
17.01 ± 0.04 Å |
| c |
18.55 ± 0.03 Å |
| α |
90° |
| β |
95.21 ± 0.09° |
| γ |
90° |
| Cell volume |
2746 ± 10 Å3 |
| Cell temperature |
100 ± 2 K |
| Ambient diffraction temperature |
100 K |
| Number of distinct elements |
8 |
| Space group number |
7 |
| Hermann-Mauguin space group symbol |
P 1 n 1 |
| Hall space group symbol |
P -2yac |
| Residual factor for all reflections |
0.1262 |
| Residual factor for significantly intense reflections |
0.0675 |
| Weighted residual factors for significantly intense reflections |
0.1184 |
| Weighted residual factors for all reflections included in the refinement |
0.1409 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.026 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7128245.html