Information card for entry 7129458

Structure parameters

• Formula: C64 H87 Bi Cl2 Ga2 N4
• Calculated formula: C64 H87 Bi Cl2 Ga2 N4
• SMILES: [Bi]([Ga]1(Cl)[N](=C(C)C=C(N1c1c(C(C)C)cccc1C(C)C)C)c1c(C(C)C)cccc1C(C)C)([Ga]1(Cl)N(c2c(C(C)C)cccc2C(C)C)C(=CC(=[N]1c1c(C(C)C)cccc1C(C)C)C)C)c1ccccc1
• Title of publication: Trapping reactions with highly unstable hydrides of antimony and bismuth
• Authors of publication: Schneider, Selina; von Hänisch, Carsten
• Journal of publication: Chemical Communications
• Year of publication: 2022
• a: 14.3525 ± 0.0011 Å
• b: 15.4208 ± 0.0013 Å
• c: 17.6984 ± 0.0014 Å
• α: 105.047 ± 0.006°
• β: 100.889 ± 0.006°
• γ: 98.819 ± 0.007°
• Cell volume: 3629.2 ± 0.5 ų
• Cell temperature: 100 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0364
• Residual factor for significantly intense reflections: 0.0276
• Weighted residual factors for significantly intense reflections: 0.0681
• Weighted residual factors for all reflections included in the refinement: 0.0702
• Goodness-of-fit parameter for all reflections included in the refinement: 0.9302
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No