Information card for entry 7201801
| Formula |
C H3 B Cl5 N Si |
| Calculated formula |
C H3 B Cl5 N Si |
| SMILES |
Cl[Si](N(B(Cl)Cl)C)(Cl)Cl |
| Title of publication |
Towards continuous processes for the synthesis of precursors of amorphous Si/B/N/C ceramics |
| Authors of publication |
Weinmann, Markus; Kroschel, Matthias; Jäschke, Thomas; Nuss, Jürgen; Jansen, Martin; Kolios, Grigorios; Morillo, Aristides; Tellaeche, Carlos; Nieken, Ulrich |
| Journal of publication |
Journal of Materials Chemistry |
| Year of publication |
2008 |
| Journal volume |
18 |
| Journal issue |
15 |
| Pages of publication |
1810 |
| a |
7.0996 ± 0.0013 Å |
| b |
6.8561 ± 0.0012 Å |
| c |
8.9728 ± 0.0016 Å |
| α |
90° |
| β |
94.854 ± 0.003° |
| γ |
90° |
| Cell volume |
435.19 ± 0.13 Å3 |
| Cell temperature |
100 ± 2 K |
| Ambient diffraction temperature |
100 ± 2 K |
| Number of distinct elements |
6 |
| Space group number |
11 |
| Hermann-Mauguin space group symbol |
P 1 21/m 1 |
| Hall space group symbol |
-P 2yb |
| Residual factor for all reflections |
0.0312 |
| Residual factor for significantly intense reflections |
0.0273 |
| Weighted residual factors for significantly intense reflections |
0.0672 |
| Weighted residual factors for all reflections included in the refinement |
0.0697 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.076 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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