Information card for entry 7202282
| Formula |
C16 H9 N3 S2 |
| Calculated formula |
C16 H9 N3 S2 |
| SMILES |
s1c2ccccc2nc2[nH]c3nc4ccccc4sc3c12 |
| Title of publication |
6H-Pyrrolo[3,2-b:4,5-b′]bis[1,4]benzothiazines: facilely synthesized semiconductors for organic field-effect transistors |
| Authors of publication |
Hong, Wei; Wei, Zhongming; Xi, Hongxia; Xu, Wei; Hu, Wenping; Wang, Quanrui; Zhu, Daoben |
| Journal of publication |
Journal of Materials Chemistry |
| Year of publication |
2008 |
| Journal volume |
18 |
| Journal issue |
40 |
| Pages of publication |
4814 |
| a |
4.7896 ± 0.001 Å |
| b |
23.389 ± 0.005 Å |
| c |
11.493 ± 0.002 Å |
| α |
90° |
| β |
97.35 ± 0.03° |
| γ |
90° |
| Cell volume |
1276.9 ± 0.4 Å3 |
| Cell temperature |
113 ± 2 K |
| Ambient diffraction temperature |
113 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.0926 |
| Residual factor for significantly intense reflections |
0.0668 |
| Weighted residual factors for significantly intense reflections |
0.137 |
| Weighted residual factors for all reflections included in the refinement |
0.1503 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.128 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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