Information card for entry 7204592

Structure parameters

• Formula: C34 H38 Ga N O5 S4
• Calculated formula: C34 H36 Ga N O4.99 S3.99
• Title of publication: Trialkylammonium salts of [M(SC{O}R)4]‒ (M = Ga3+ and In3+) as precursors for metal sulfide thin films
• Authors of publication: Deivaraj, Theivanayagam C.; Lin, Ming; Loh, Kian Ping; Yeadon, Mark; Vittal, Jagadese J.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2003
• Journal volume: 13
• Journal issue: 5
• Pages of publication: 1149
• a: 12.725 ± 0.0003 Å
• b: 12.8573 ± 0.0001 Å
• c: 21.6933 ± 0.0004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3549.22 ± 0.11 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 6
• Space group number: 19
• Hermann-Mauguin space group symbol: P 21 21 21
• Hall space group symbol: P 2ac 2ab
• Residual factor for all reflections: 0.1299
• Residual factor for significantly intense reflections: 0.0691
• Weighted residual factors for significantly intense reflections: 0.1265
• Weighted residual factors for all reflections included in the refinement: 0.1482
• Goodness-of-fit parameter for all reflections included in the refinement: 1.033
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No