Information card for entry 7204753

Structure parameters

• Formula: C36 H84 Ag3 N3 P6 Se6
• Calculated formula: C36 H84 Ag3 N3 P6 Se6
• SMILES: [Ag]12[Se]=P(N=P([Se]1[Ag]1[Se]=P(N=P([Se]1[Ag]1[Se]=P(N=P([Se]21)(C(C)C)C(C)C)(C(C)C)C(C)C)(C(C)C)C(C)C)(C(C)C)C(C)C)(C(C)C)C(C)C)(C(C)C)C(C)C
• Title of publication: The synthesis, X-ray structures and CVD studies of some group 11 complexes of iminobis(diisopropylphosphine selenides) and their use in the deposition of I/III/VI photovoltaic materials
• Authors of publication: Afzaal, Mohammad; Crouch, David J.; O'Brien, Paul; Raftery, James; Skabara, Peter J.; White, Andrew J. P.; Williams, David J.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2004
• Journal volume: 14
• Journal issue: 2
• Pages of publication: 233
• a: 14.0717 ± 0.0011 Å
• b: 14.7803 ± 0.0008 Å
• c: 17.3186 ± 0.0012 Å
• α: 114.918 ± 0.004°
• β: 92.242 ± 0.006°
• γ: 115.042 ± 0.005°
• Cell volume: 2854.1 ± 0.4 ų
• Cell temperature: 183 ± 2 K
• Ambient diffraction temperature: 183 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.061
• Residual factor for significantly intense reflections: 0.0382
• Weighted residual factors for all reflections: 0.0922
• Weighted residual factors for significantly intense reflections: 0.0763
• Goodness-of-fit parameter for all reflections: 1.009
• Goodness-of-fit parameter for significantly intense reflections: 1.061
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No