Information card for entry 7211559

Structure parameters

• Formula: C56 H62 Si2
• Calculated formula: C56 H62 Si2
• SMILES: c1c2c(C#C[Si](C(C)C)(C(C)C)C(C)C)c3c(cc(cc3)c3cc4ccccc4cc3)c(c2ccc1c1ccc2ccccc2c1)C#C[Si](C(C)C)(C(C)C)C(C)C
• Title of publication: High mobility organic single crystal transistors based on soluble triisopropylsilylethynyl anthracene derivatives
• Authors of publication: Chung, Dae Sung; Park, Jong Won; Park, Jong-Hwa; Moon, Dohyun; Kim, Ghyung Hwa; Lee, Heung-Soo; Lee, Dong Hoon; Shim, Hong-Ku; Kwon, Soon-Ki; Park, Chan Eon
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2010
• Journal volume: 20
• Journal issue: 3
• Pages of publication: 524
• a: 8.1903 ± 0.0016 Å
• b: 11.438 ± 0.002 Å
• c: 12.144 ± 0.002 Å
• α: 78.37 ± 0.03°
• β: 88.17 ± 0.03°
• γ: 85.1 ± 0.03°
• Cell volume: 1110.1 ± 0.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 3
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0532
• Residual factor for significantly intense reflections: 0.0429
• Weighted residual factors for significantly intense reflections: 0.1104
• Weighted residual factors for all reflections included in the refinement: 0.1359
• Goodness-of-fit parameter for all reflections included in the refinement: 1.096
• Diffraction radiation wavelength: 0.75 Å
• Diffraction radiation type: synchrotron
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No