Information card for entry 7223497

Structure parameters

• Formula: C58 H100 N8 Se2 Si4 Sn2
• Calculated formula: C58 H100 N8 Se2 Si4 Sn2
• SMILES: [Sn]12([Se][Sn]3([Se]1)([N](c1c(cccc1C)C)=C(N3c1c(C)cccc1C)N(C(C)C)C(C)C)N([Si](C)(C)C)[Si](C)(C)C)([N](=C(N(C(C)C)C(C)C)N2c1c(C)cccc1C)c1c(cccc1C)C)N([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Mixed guanidinato-amido Ge(IV) and Sn(IV) complexes with Ge=E (E = S, Se) double bond and SnS4, Sn2Se2 rings†
• Authors of publication: Barman, Milan Kumar; Nembenna, Sharanappa
• Journal of publication: RSC Adv.
• Year of publication: 2015
• a: 13.142 ± 0.005 Å
• b: 14.843 ± 0.005 Å
• c: 18.533 ± 0.005 Å
• α: 96.409 ± 0.005°
• β: 91.916 ± 0.005°
• γ: 110.364 ± 0.005°
• Cell volume: 3357.9 ± 1.9 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.198
• Residual factor for significantly intense reflections: 0.0908
• Weighted residual factors for significantly intense reflections: 0.2035
• Weighted residual factors for all reflections included in the refinement: 0.2649
• Goodness-of-fit parameter for all reflections included in the refinement: 0.973
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No