Information card for entry 7224993
| Formula |
C16 H10 N6 S4 |
| Calculated formula |
C16 H10 N6 S4 |
| SMILES |
C\1(=C2\C(=S)N(CC)C(=C(C#N)C#N)S2)C(=S)N(CC)C(=C(C#N)C#N)S1 |
| Title of publication |
A sulfur-rich π-electron acceptor derived from 5,5′-bithiazolidinylidene: charge-transfer complex vs. charge-transfer salt |
| Authors of publication |
Le Gal, Yann; Rajkumar, Mangaiyarkarasi; Vacher, Antoine; Dorcet, Vincent; Roisnel, Thierry; Fourmigué, Marc; Barrière, Frédéric; Guizouarn, Thierry; Lorcy, Dominique |
| Journal of publication |
CrystEngComm |
| Year of publication |
2016 |
| Journal volume |
18 |
| Journal issue |
21 |
| Pages of publication |
3925 |
| a |
5.3638 ± 0.0002 Å |
| b |
7.2562 ± 0.0003 Å |
| c |
12.7329 ± 0.0005 Å |
| α |
77.773 ± 0.002° |
| β |
80.204 ± 0.001° |
| γ |
69.11 ± 0.001° |
| Cell volume |
450.06 ± 0.03 Å3 |
| Cell temperature |
294 ± 2 K |
| Ambient diffraction temperature |
294 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0292 |
| Residual factor for significantly intense reflections |
0.0261 |
| Weighted residual factors for significantly intense reflections |
0.0711 |
| Weighted residual factors for all reflections included in the refinement |
0.0747 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.053 |
| Diffraction radiation probe |
x-ray |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7224993.html