Information card for entry 7225909
| Common name |
BN-TTF |
| Chemical name |
bis(naphtho[1,2-d])tetrathiafulvalene |
| Formula |
C22 H12 S4 |
| Calculated formula |
C22 H12 S4 |
| SMILES |
C1(/Sc2c(ccc3ccccc23)S1)=C1\Sc2c(ccc3ccccc23)S1 |
| Title of publication |
Structural and electronic characterisation of π-extended tetrathiafulvalene derivatives as active components in field-effect transistors. |
| Authors of publication |
Campos, Antonio; Oxtoby, Neil; Galindo, Sergi; Pfattner, Raphael; Veciana, Jaume; Bromley, Stefan T.; Rovira, Concepció; Mas-Torrent, Marta |
| Journal of publication |
CrystEngComm |
| Year of publication |
2016 |
| Journal volume |
18 |
| Journal issue |
33 |
| Pages of publication |
6149 - 6152 |
| a |
3.9274 ± 0.0014 Å |
| b |
7.167 ± 0.003 Å |
| c |
15.716 ± 0.006 Å |
| α |
83.267 ± 0.006° |
| β |
89.379 ± 0.006° |
| γ |
80.859 ± 0.006° |
| Cell volume |
433.7 ± 0.3 Å3 |
| Cell temperature |
300 ± 2 K |
| Ambient diffraction temperature |
300 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.1119 |
| Residual factor for significantly intense reflections |
0.0492 |
| Weighted residual factors for significantly intense reflections |
0.098 |
| Weighted residual factors for all reflections included in the refinement |
0.1131 |
| Goodness-of-fit parameter for all reflections included in the refinement |
0.968 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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