Information card for entry 7235435
| Formula |
C42 H46 N2 O6 |
| Calculated formula |
C42 H46 N2 O6 |
| Title of publication |
New semiconducting naphthalene bisimides N-substituted with alkoxyphenyl groups: spectroscopic, electrochemical, structural and electrical properties |
| Authors of publication |
Rybakiewicz, Renata; Tszydel, Izabela; Zapala, Joanna; Skorka, Lukasz; Wamil, Damian; Djurado, David; Pécaut, Jacques; Ulanski, Jacek; Zagorska, Malgorzata; Pron, Adam |
| Journal of publication |
RSC Adv. |
| Year of publication |
2014 |
| Journal volume |
4 |
| Journal issue |
27 |
| Pages of publication |
14089 |
| a |
5.2267 ± 0.0005 Å |
| b |
7.617 ± 0.0005 Å |
| c |
22.3732 ± 0.0018 Å |
| α |
96.434 ± 0.006° |
| β |
95.114 ± 0.007° |
| γ |
100.318 ± 0.007° |
| Cell volume |
865.34 ± 0.13 Å3 |
| Cell temperature |
150 ± 2 K |
| Ambient diffraction temperature |
150 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.1763 |
| Residual factor for significantly intense reflections |
0.079 |
| Weighted residual factors for significantly intense reflections |
0.1207 |
| Weighted residual factors for all reflections included in the refinement |
0.1554 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.014 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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