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Information card for entry 7236332
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| Coordinates | 7236332.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Common name | MAIB |
|---|---|
| Chemical name | Trimethylammonium dibismuth nonaiodide |
| Formula | C3 H9 Bi2 I9 N3 |
| Calculated formula | C3 Bi2 I9 N3 |
| Title of publication | Optoelectronic and photovoltaic properties of the air-stable organohalide semiconductor (CH3NH3)3Bi2I9 |
| Authors of publication | Abulikemu, Mutalifu; Ould-Chikh, Samy; Miao, Xiaohe; Alarousu, Erkki; Murali, Banavoth; Ngongang Ndjawa, Guy Olivier; Barbé, Jérémy; El Labban, Abdulrahman; Amassian, Aram; Del Gobbo, Silvano |
| Journal of publication | Journal of Materials Chemistry A |
| Year of publication | 2016 |
| Journal volume | 4 |
| Journal issue | 32 |
| Pages of publication | 12504 |
| a | 8.5821 ± 0.0003 Å |
| b | 8.5821 ± 0.0003 Å |
| c | 21.7678 ± 0.0008 Å |
| α | 90° |
| β | 90° |
| γ | 120° |
| Cell volume | 1388.46 ± 0.09 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 194 |
| Hermann-Mauguin space group symbol | P 63/m m c |
| Hall space group symbol | -P 6c 2c |
| Residual factor for all reflections | 0.0422 |
| Residual factor for significantly intense reflections | 0.0357 |
| Weighted residual factors for significantly intense reflections | 0.0909 |
| Weighted residual factors for all reflections included in the refinement | 0.0959 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.105 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/7236332.html
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structural data.