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Information card for entry 7246627
Preview
| Coordinates | 7246627.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C36 H20 S3 |
|---|---|
| Calculated formula | C36 H20 S3 |
| SMILES | s1c2c3sc(cc3sc2cc1c1cc2c(cc1)cc1c(c2)cccc1)c1ccc2c(c1)cc1c(c2)cccc1 |
| Title of publication | A new dithieno[3,2-b:2′,3′-d]thiophene derivative for high performance single crystal organic field-effect transistors and UV-sensitive phototransistors |
| Authors of publication | Lou, Yunpeng; Shi, Rui; Yu, Li; Jiang, Ting; Zhang, Haoquan; Zhang, Lifeng; Hu, Yongxu; Ji, Deyang; Sun, Yajing; Li, Jie; Li, Liqiang; Hu, Wenping |
| Journal of publication | RSC Advances |
| Year of publication | 2023 |
| Journal volume | 13 |
| Journal issue | 17 |
| Pages of publication | 11706 - 11711 |
| a | 7.483 ± 0.0003 Å |
| b | 5.9649 ± 0.0002 Å |
| c | 55.0355 ± 0.0014 Å |
| α | 90° |
| β | 101.485 ± 0.003° |
| γ | 90° |
| Cell volume | 2407.34 ± 0.14 Å3 |
| Cell temperature | 160.15 K |
| Ambient diffraction temperature | 160.15 K |
| Number of distinct elements | 3 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/c 1 |
| Hall space group symbol | -P 2ybc |
| Residual factor for all reflections | 0.1216 |
| Residual factor for significantly intense reflections | 0.0679 |
| Weighted residual factors for significantly intense reflections | 0.1344 |
| Weighted residual factors for all reflections included in the refinement | 0.1611 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.043 |
| Diffraction radiation wavelength | 1.54184 Å |
| Diffraction radiation type | CuKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/7246627.html
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Users of the data should acknowledge the original authors of the
structural data.