Information card for entry 7250279

Structure parameters

• Formula: Cs Ga Ge3 S8
• Calculated formula: Cs Ga Ge3 S8
• Title of publication: Cationic substitution engineering induces a new quaternary chalcogenide in the A–MIIIA–MIVA–Q system for optical crystal applications
• Authors of publication: Wang, Yue; Li, Xuezhong; Lou, Zihao; Shi, Yongfang
• Journal of publication: CrystEngComm
• Year of publication: 2025
• Journal volume: 27
• Journal issue: 20
• Pages of publication: 3378 - 3385
• a: 6.3479 ± 0.0004 Å
• b: 16.2352 ± 0.0008 Å
• c: 6.8246 ± 0.0003 Å
• α: 90°
• β: 95.902 ± 0.005°
• γ: 90°
• Cell volume: 699.61 ± 0.06 ų
• Cell temperature: 150 ± 0.1 K
• Ambient diffraction temperature: 150 ± 0.1 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0643
• Residual factor for significantly intense reflections: 0.0484
• Weighted residual factors for significantly intense reflections: 0.1346
• Weighted residual factors for all reflections included in the refinement: 0.1489
• Goodness-of-fit parameter for all reflections included in the refinement: 1.049
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No