Information card for entry 7700683
| Formula |
Al Ba3 Cl S4 |
| Calculated formula |
Al Ba3 Cl S4 |
| Title of publication |
Structural modulation induced by M<sup>IIIA</sup> metals in Ba<sub>3</sub>MQ<sub>4</sub>X (M = Al, Ga, In; Q = S, Se; X = Cl, Br): an experimental and computational analysis. |
| Authors of publication |
Tudi, Abudukadi; Han, Shujuan; Abudurusuli, Ailijiang; Yu, Haohai; Yang, Zhihua; Pan, Shilie |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2019 |
| Journal volume |
48 |
| Journal issue |
33 |
| Pages of publication |
12713 - 12719 |
| a |
12.2257 ± 0.0011 Å |
| b |
9.5329 ± 0.0009 Å |
| c |
8.4343 ± 0.0008 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
982.99 ± 0.16 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
62 |
| Hermann-Mauguin space group symbol |
P n m a |
| Hall space group symbol |
-P 2ac 2n |
| Residual factor for all reflections |
0.0159 |
| Residual factor for significantly intense reflections |
0.0149 |
| Weighted residual factors for significantly intense reflections |
0.0318 |
| Weighted residual factors for all reflections included in the refinement |
0.0324 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.143 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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