Information card for entry 7703700
| Formula |
C14 H21 Cl Ir K N2 O2 |
| Calculated formula |
C14 H21 Cl Ir K N2 O2 |
| Title of publication |
Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition. |
| Authors of publication |
Han, Seong Ho; Agbenyeke, Raphael Edem; Lee, Ga Yeon; Park, Bo Keun; Kim, Chang Gyoun; Lee, Young Kuk; Son, Seung Uk; Chung, Taek-Mo |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2020 |
| Journal volume |
49 |
| Journal issue |
14 |
| Pages of publication |
4306 - 4314 |
| a |
28.918 ± 0.008 Å |
| b |
28.918 ± 0.008 Å |
| c |
12.364 ± 0.003 Å |
| α |
90° |
| β |
90° |
| γ |
120° |
| Cell volume |
8954 ± 4 Å3 |
| Cell temperature |
93 K |
| Ambient diffraction temperature |
93 K |
| Number of distinct elements |
7 |
| Space group number |
148 |
| Hermann-Mauguin space group symbol |
R -3 :H |
| Hall space group symbol |
-R 3 |
| Residual factor for all reflections |
0.054 |
| Residual factor for significantly intense reflections |
0.0434 |
| Weighted residual factors for significantly intense reflections |
0.092 |
| Weighted residual factors for all reflections included in the refinement |
0.0981 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.017 |
| Diffraction radiation wavelength |
0.71075 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7703700.html
