Information card for entry 7707462

Structure parameters

• Formula: C40 H82 N6 Si4
• Calculated formula: C40 H82 N6 Si4
• SMILES: [Si@H]([Si@@H]([Si](C)(C(C)(C)C)C(C)(C)C)N=C1N(C=CN1C(C)(C)C)C(C)(C)C)([Si](C)(C(C)(C)C)C(C)(C)C)N=C1N(C=CN1C(C)(C)C)C(C)(C)C.[Si@@H]([Si@H]([Si](C)(C(C)(C)C)C(C)(C)C)N=C1N(C=CN1C(C)(C)C)C(C)(C)C)([Si](C)(C(C)(C)C)C(C)(C)C)N=C1N(C=CN1C(C)(C)C)C(C)(C)C
• Title of publication: Imino(silyl)disilenes: application in versatile bond activation, reversible oxidation and thermal isomerization.
• Authors of publication: Holzner, Richard; Porzelt, Amelie; Karaca, Uhut S.; Kiefer, Fiona; Frisch, Philipp; Wendel, Daniel; Holthausen, Max C.; Inoue, Shigeyoshi
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2021
• Journal volume: 50
• Journal issue: 25
• Pages of publication: 8785 - 8793
• a: 10.4102 ± 0.0019 Å
• b: 12.363 ± 0.002 Å
• c: 21.101 ± 0.004 Å
• α: 81.153 ± 0.007°
• β: 76.718 ± 0.007°
• γ: 65.519 ± 0.007°
• Cell volume: 2400.2 ± 0.8 ų
• Cell temperature: 100 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0403
• Residual factor for significantly intense reflections: 0.0333
• Weighted residual factors for significantly intense reflections: 0.082
• Weighted residual factors for all reflections included in the refinement: 0.0861
• Goodness-of-fit parameter for all reflections included in the refinement: 1.04
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No