Information card for entry 7708250

Structure parameters

• Formula: C20 H56 N4 O2 Si4 Sn2
• Calculated formula: C20 H56 N4 O2 Si4 Sn2
• SMILES: [Sn]12([N](CC[O]1[Sn]1([N](CC[O]21)(C)C)N([Si](C)(C)C)[Si](C)(C)C)(C)C)N([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Evaluation of Sn(II) Aminoalkoxide Precursors for Atomic Layer Deposition of SnO Thin Films. Invitation: Dalton Transactions web collection themed around the topic of tin chemistry
• Authors of publication: Johnson, Andrew Lee; Paish, James David; Snook, Michael
• Journal of publication: Dalton Transactions
• Year of publication: 2021
• a: 8.7579 ± 0.0004 Å
• b: 8.9319 ± 0.0004 Å
• c: 23.8923 ± 0.0019 Å
• α: 80.516 ± 0.005°
• β: 86.651 ± 0.005°
• γ: 68.46 ± 0.004°
• Cell volume: 1714.68 ± 0.18 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150.01 ± 0.1 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0538
• Residual factor for significantly intense reflections: 0.0443
• Weighted residual factors for significantly intense reflections: 0.0877
• Weighted residual factors for all reflections included in the refinement: 0.0894
• Goodness-of-fit parameter for all reflections included in the refinement: 1.085
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No