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Information card for entry 7709168
Preview
| Coordinates | 7709168.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C72 H76 O14 Si12 |
|---|---|
| Calculated formula | C72 H76 O14 Si12 |
| SMILES | [Si]1(c2ccccc2)(O[Si]2(c3ccccc3)O[Si](c3ccccc3)(O[Si](c3ccccc3)(O1)O[Si]1(c3ccccc3)O[Si](c3ccccc3)(O[Si](c3ccccc3)(O2)O[Si](c2ccccc2)(O1)O[Si](C=C)(C=C)C=C)O[Si](C=C)(C=C)C=C)O[Si](C=C)(C=C)C=C)O[Si](C=C)(C=C)C=C |
| Title of publication | Vinyl- and chloromethyl-substituted mono-T8 and double-decker silsesquioxanes as specific cores to low generation dendritic systems |
| Authors of publication | Mrzygłód, Aleksandra; Kubicki, Maciej; Dudziec, Beata |
| Journal of publication | Dalton Transactions |
| Year of publication | 2022 |
| a | 24.28388 ± 0.00012 Å |
| b | 22.79629 ± 0.00011 Å |
| c | 14.35553 ± 0.00007 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 7946.97 ± 0.07 Å3 |
| Cell temperature | 130 ± 1 K |
| Ambient diffraction temperature | 130 ± 1 K |
| Number of distinct elements | 4 |
| Space group number | 33 |
| Hermann-Mauguin space group symbol | P n a 21 |
| Hall space group symbol | P 2c -2n |
| Residual factor for all reflections | 0.0418 |
| Residual factor for significantly intense reflections | 0.0411 |
| Weighted residual factors for significantly intense reflections | 0.1146 |
| Weighted residual factors for all reflections included in the refinement | 0.1156 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.036 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 1.54184 Å |
| Diffraction radiation type | CuKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/7709168.html
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Users of the data should acknowledge the original authors of the
structural data.