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Information card for entry 7709762
Preview
| Coordinates | 7709762.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C16 H42 N4 O2 Zr |
|---|---|
| Calculated formula | C16 H40 N4 O2 Zr |
| SMILES | [Zr]12(OC(C[N]1(C)C)(C)C)(OC(C[N]2(C)C)(C)C)(N(C)C)N(C)C |
| Title of publication | Formation of mononuclear N,O-chelate zirconium complexes by direct insertion of epoxide into tetrakis(dimethylamido)zirconium: highly promising approach for developing an ALD precursor of ZrO2 thin films |
| Authors of publication | Jiang, Jianwei; Choi, Sohee; Oh, Jaehyun; Choi, Jihyun; Sun, Ho-Jung; Yoon, Sungho |
| Journal of publication | Dalton Transactions |
| Year of publication | 2022 |
| a | 8.8032 ± 0.0002 Å |
| b | 9.0568 ± 0.0001 Å |
| c | 15.4925 ± 0.0002 Å |
| α | 75.621 ± 0.001° |
| β | 86.32 ± 0.001° |
| γ | 65.266 ± 0.002° |
| Cell volume | 1085.63 ± 0.04 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.0334 |
| Residual factor for significantly intense reflections | 0.0324 |
| Weighted residual factors for significantly intense reflections | 0.0783 |
| Weighted residual factors for all reflections included in the refinement | 0.0786 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.701 |
| Diffraction radiation wavelength | 1.54184 Å |
| Diffraction radiation type | CuKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/7709762.html
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